Open access
Public Knowledge Vault
A fixed corpus of public semiconductor and cleanroom documents. No account, no sign in. Ask a question and the vault answers from these documents, shows you the passage it used, and says so when it cannot find support.
What is in the vault
30 documents. 24 have their full text indexed and can be searched. 6 carry a third-party or unstated licence, so the vault records and links them but does not reproduce their text.
Each row below records what was actually retrieved: the URL, the HTTP status and content type returned, the SHA-256 of the bytes, the size, how many characters were extracted, and the basis on which the document was judged to be in scope. Nothing here is asserted from a filename or a search result.
- https://stacks.cdc.gov/view/cdc/202896/cdc_202896_DS1.pdfLinked only, text not reproduced
NIOSH Field Studies Team Assessment: Worker Exposure to Aerosolized Metal Oxide Nanoparticles in a Semiconductor Fabrication Facility
Journal of Occupational and Environmental Hygiene
- Retrieved
- 2026-08-14
- Response
- 200 application/pdf
- Size
- 752 KB, 11 pages
- Characters
- 46,582 extracted, none indexed
sha256 e0b9d36d516a8318c622bc6e30329325f64f2df1da67b4fc608dea57f2399cbb
Processing: 11 pdf-parse page markers removed
In scope because: 4 distinct core terms at 1.07 per 1000 chars. Core: cleanroom x28, semiconductor x15, wafer x4, chemical mechanical x3. Supporting: particle count x11, plasma x2, silicon x2, contamination x2.
Licence: Document carries commercial publisher terms ("tandfonline.com"), so the text is not reproduced regardless of the host serving it. Linked only.
- https://www.osti.gov/pages/servlets/purl/1853526Linked only, text not reproduced
Scaling of Atomic Layer Etching of SiO2 in Fluorocarbon Plasmas: Transient Etching and Surface Roughness
Journal of Vacuum Science and Technology A · 2021-03-16
- Retrieved
- 2026-08-14
- Response
- 200 application/pdf
- Size
- 9924 KB, 19 pages
- Characters
- 73,788 extracted, none indexed
sha256 903ab8c813d6463d497a6c162e9fdce0dec2c9b2e61483670cac9772b568173e
Processing: 19 pdf-parse page markers removed
In scope because: 5 distinct core terms at 1.24 per 1000 chars. Core: sputter x71, wafer x16, semiconductor x2, photoresist x1, silane x1. Supporting: etch x189, plasma x61, deposition x39, silicon x4.
Licence: Document carries a third-party copyright notice ("© 2021 Author(s)"), so the text is not reproduced. Linked only.
- https://www.osti.gov/servlets/purl/932878Open, marked Unlimited Release
Integrated Optical MEMS using Through-Wafer Vias and Bump-Bonding (SAND2008-0256)
Sandia National Laboratories
- Retrieved
- 2026-08-14
- Response
- 200 application/pdf
- Size
- 585 KB, 25 pages
- Characters
- 33,719 extracted, 33,353 indexed
sha256 8135718c8e8d94fdd53ddf5d8e3ca0732badc288f1373bf31fb3ed7f5323889a
Processing: 25 pdf-parse page markers removed
In scope because: 4 distinct core terms at 1.34 per 1000 chars. Core: wafer x35, semiconductor x8, integrated circuit x1, chemical vapor x1. Supporting: silicon x15, etch x13, deposition x1.
Licence: U.S. Department of Energy national laboratory report marked "Unlimited Release" in the document itself, distributed by OSTI. No third-party copyright notice found in the document text.
- https://www.osti.gov/servlets/purl/1028904Open, marked Unlimited Release
Pollution Prevention Opportunity Assessment for Organization 1700 (SAND2007-3420)
Sandia National Laboratories
- Retrieved
- 2026-08-14
- Response
- 200 application/pdf
- Size
- 482 KB, 46 pages
- Characters
- 55,397 extracted, 54,716 indexed
sha256 8d208b506259706140c74b72265f579011fd0b35682a28544dfd31f083d1df06
Processing: 46 pdf-parse page markers removed
In scope because: 13 distinct core terms at 2.68 per 1000 chars. Core: wafer x55, photoresist x45, semiconductor x11, clean room x10, hydrofluoric x7, integrated circuit x5. Supporting: etch x18, deposition x13, silicon x9, contamination x8.
Licence: U.S. Department of Energy national laboratory report marked "Unlimited Release" in the document itself, distributed by OSTI. No third-party copyright notice found in the document text.
- https://www.osti.gov/servlets/purl/780289Open, marked Unlimited Release
Post-Processed Integrated Microsystems (SAND2001-0227)
Sandia National Laboratories
- Retrieved
- 2026-08-14
- Response
- 200 application/pdf
- Size
- 6719 KB, 74 pages
- Characters
- 174,567 extracted, 173,466 indexed
sha256 5f32afb1f6a1b74667a72f4e9e2e4918693d8f28d0e4a3415b21113da25af349
Processing: 74 pdf-parse page markers removed
In scope because: 13 distinct core terms at 0.93 per 1000 chars. Core: wafer x80, photoresist x27, lithograph x13, sputter x13, thin film x7, integrated circuit x6. Supporting: etch x295, silicon x101, deposition x28, plasma x16.
Licence: U.S. Department of Energy national laboratory report marked "Unlimited Release" in the document itself, distributed by OSTI. No third-party copyright notice found in the document text.
- https://www.osti.gov/servlets/purl/921609Open, marked Unlimited Release
Si-Based RF MEMS Components (SAND2005-0052)
Sandia National Laboratories
- Retrieved
- 2026-08-14
- Response
- 200 application/pdf
- Size
- 1047 KB, 54 pages
- Characters
- 99,919 extracted, 99,118 indexed
sha256 2bb922564b2b54ccb38a77607a9cffda8407c1441bbdd8c73222c4ae863268ac
Processing: 54 pdf-parse page markers removed
In scope because: 12 distinct core terms at 0.53 per 1000 chars. Core: wafer x28, sputter x7, semiconductor x3, integrated circuit x3, thin film x3, photoresist x2. Supporting: etch x43, deposition x22, anneal x21, silicon x7.
Licence: U.S. Department of Energy national laboratory report marked "Unlimited Release" in the document itself, distributed by OSTI. No third-party copyright notice found in the document text.
- https://www.osti.gov/servlets/purl/1145751Linked only, text not reproduced
Thin Films Deposition Methods: Adding Functionality One Atom At A Time (SAND2014-4024C)
Sandia National Laboratories
- Retrieved
- 2026-08-14
- Response
- 200 application/pdf
- Size
- 10612 KB, 25 pages
- Characters
- 8,895 extracted, none indexed
sha256 f92097b6512c2345b23e96e1db870a25a802c546480eed302b3a47d4f898f776
Processing: 25 pdf-parse page markers removed
In scope because: 5 distinct core terms at 4.17 per 1000 chars. Core: sputter x15, thin film x14, semiconductor x3, cleanroom x2, chemical vapor x2. Supporting: deposition x26, vacuum x8, plasma x3, etch x1.
Licence: No licence statement found in the document and www.osti.gov is not a U.S. Government publisher, so the text is not reproduced. Linked only.
- https://www.osti.gov/servlets/purl/1031299Open, marked Unlimited Release
Three Wafer Stacking for 3D Integration (SAND2011-8458)
Sandia National Laboratories
- Retrieved
- 2026-08-14
- Response
- 200 application/pdf
- Size
- 2061 KB, 41 pages
- Characters
- 37,245 extracted, 36,639 indexed
sha256 e5829330ae9b11ae1f01c9fd84fcf186cdbfc494e053e3f63c63a3e33306132a
Processing: 41 pdf-parse page markers removed
In scope because: 8 distinct core terms at 4.03 per 1000 chars. Core: wafer x117, reticle x11, lithograph x6, photolithograph x5, photoresist x5, chemical vapor x2. Supporting: etch x48, silicon x18, deposition x10, anneal x6.
Licence: U.S. Department of Energy national laboratory report marked "Unlimited Release" in the document itself, distributed by OSTI. No third-party copyright notice found in the document text.
- https://nvlpubs.nist.gov/nistpubs/Legacy/SP/nbsspecialpublication400-45.pdfPublic domain, U.S. Government
Semiconductor Measurement Technology: Progress Report, April 1 to September 30, 1977
U.S. National Bureau of Standards
- Retrieved
- 2026-08-14
- Response
- 200 application/pdf
- Size
- 2793 KB, 48 pages
- Characters
- 138,783 extracted, 138,072 indexed
sha256 fb5853c2fd227f3114ba29894d797df840699160e885f86eb63f63eb084892e0
Processing: 48 pdf-parse page markers removed
In scope because: 6 distinct core terms at 1.04 per 1000 chars. Core: wafer x57, semiconductor x39, dopant x30, lithograph x14, photolithograph x12, sputter x11. Supporting: silicon x73, metrology x3, anneal x3, etch x2.
Licence: Work of the U.S. Government, not subject to copyright protection in the United States under 17 U.S.C. 105. Retrieved from nvlpubs.nist.gov. No third-party copyright notice found in the document text.
- https://nvlpubs.nist.gov/nistpubs/Legacy/SP/nbsspecialpublication400-12.pdfPublic domain, U.S. Government
Semiconductor Measurement Technology: Quarterly Report, July 1 to September 30, 1974
U.S. National Bureau of Standards
- Retrieved
- 2026-08-14
- Response
- 200 application/pdf
- Size
- 3908 KB, 68 pages
- Characters
- 171,451 extracted, 170,440 indexed
sha256 c3d67f6b90f37bf96c1efaf59dec80a313995e54f0e5f614fa799d3ed1239bf4
Processing: 68 pdf-parse page markers removed
In scope because: 9 distinct core terms at 0.86 per 1000 chars. Core: semiconductor x69, dopant x34, wafer x28, epitax x20, photoresist x8, photolithograph x2. Supporting: silicon x133, metrology x4, contamination x4, etch x3.
Licence: Work of the U.S. Government, not subject to copyright protection in the United States under 17 U.S.C. 105. Retrieved from nvlpubs.nist.gov. No third-party copyright notice found in the document text.
- https://nvlpubs.nist.gov/nistpubs/Legacy/SP/nbsspecialpublication400-80.pdfPublic domain, U.S. Government
Semiconductor Measurement Technology: Silicon-on-Insulator, A Categorized Bibliography
U.S. National Bureau of Standards
- Retrieved
- 2026-08-14
- Response
- 200 application/pdf
- Size
- 13288 KB, 220 pages
- Characters
- 633,243 extracted, 629,611 indexed
sha256 ef8f59d4207f351ac277930f45fdb96cbdb9aef61e2c9b5351762237341b3875
Processing: 220 pdf-parse page markers removed
In scope because: 8 distinct core terms at 0.91 per 1000 chars. Core: epitax x350, wafer x183, semiconductor x87, dopant x17, lithograph x6, photolithograph x1. Supporting: silicon x1576, anneal x279, etch x36, deposition x31.
Licence: Work of the U.S. Government, not subject to copyright protection in the United States under 17 U.S.C. 105. Retrieved from nvlpubs.nist.gov. No third-party copyright notice found in the document text.
- https://nvlpubs.nist.gov/nistpubs/Legacy/SP/nbsspecialpublication400-31.pdfPublic domain, U.S. Government
Semiconductor Measurement Technology: Techniques for Measuring the Integrity of Passivation Overcoats on Integrated Circuits
U.S. National Bureau of Standards
- Retrieved
- 2026-08-14
- Response
- 200 application/pdf
- Size
- 7597 KB, 128 pages
- Characters
- 185,144 extracted, 183,076 indexed
sha256 0a0b8641e216f06e2ed9005982e2e221e8c932b4aab01c203c37642c9f3c5d9e
Processing: 128 pdf-parse page markers removed
In scope because: 7 distinct core terms at 0.68 per 1000 chars. Core: wafer x112, semiconductor x11, hydrofluoric x7, photoresist x5, lithograph x3, photolithograph x2. Supporting: etch x338, silicon x123, deposition x81, plasma x5.
Licence: Work of the U.S. Government, not subject to copyright protection in the United States under 17 U.S.C. 105. Retrieved from nvlpubs.nist.gov. No third-party copyright notice found in the document text.
- https://www.cdc.gov/niosh/ershdb/emergencyresponsecard_29750030.htmlPublic domain, U.S. Government
Hydrogen Fluoride / Hydrofluoric Acid: Systemic Agent
U.S. National Institute for Occupational Safety and Health
- Retrieved
- 2026-08-14
- Response
- 200 text/html
- Size
- 140 KB
- Characters
- 32,677 extracted, 32,677 indexed
sha256 c97bf5a83a5d3d4a0677577082d7b8466b9437bd2a2886318f346016e59dcfa6
In scope because: 2 distinct core terms at 1.46 per 1000 chars. Core: hydrofluoric x48, semiconductor x1. Supporting: contamination x26, etch x2, silicon x1.
Licence: Work of the U.S. Government, not subject to copyright protection in the United States under 17 U.S.C. 105. Retrieved from www.cdc.gov. No third-party copyright notice found in the document text.
- https://nvlpubs.nist.gov/nistpubs/Legacy/IR/nistir7171.pdfPublic domain, U.S. Government
Office of Microelectronics Programs: Programs, Activities, and Accomplishments (NISTIR 7171)
U.S. National Institute of Standards and Technology
- Retrieved
- 2026-08-14
- Response
- 200 application/pdf
- Size
- 7822 KB, 216 pages
- Characters
- 596,713 extracted, 593,149 indexed
sha256 620f2fe844e224bd5a375e6c363d1faa68beee7a1545825a4c7848013eaa357d
Processing: 216 pdf-parse page markers removed
In scope because: 18 distinct core terms at 1.35 per 1000 chars. Core: wafer x231, semiconductor x207, lithograph x107, thin film x71, photoresist x49, integrated circuit x42. Supporting: metrology x289, silicon x186, plasma x77, deposition x59.
Licence: Work of the U.S. Government, not subject to copyright protection in the United States under 17 U.S.C. 105. Retrieved from nvlpubs.nist.gov. No third-party copyright notice found in the document text.
- https://nvlpubs.nist.gov/nistpubs/Legacy/SP/nistspecialpublication400-94.pdfLinked only, text not reproduced
Semiconductor Measurement Technology: Improved Characterization and Evaluation Measurements for HgCdTe Detector Materials, Processes, and Devices Used on the GOES and TIROS Satellites
U.S. National Institute of Standards and Technology
- Retrieved
- 2026-08-14
- Response
- 200 application/pdf
- Size
- 10019 KB, 188 pages
- Characters
- 436,049 extracted, none indexed
sha256 961833d0c128eecb54c5d770744d375b95e200670f820585c8ebd7cb63f3d506
Processing: 188 pdf-parse page markers removed
In scope because: 7 distinct core terms at 0.58 per 1000 chars. Core: wafer x108, semiconductor x95, dopant x35, epitax x22, lithograph x18, photolithograph x5. Supporting: etch x38, silicon x25, contamination x9, metrology x6.
Licence: Document carries a third-party copyright notice ("© 1993 lOP Publishing Ltd Review of test structures for infrared detectors to IR detec"), so the text is not reproduced. Linked only.
- https://nvlpubs.nist.gov/nistpubs/Legacy/IR/nistir7010.pdfPublic domain, U.S. Government
Semiconductor, Microelectronics and Nanoelectronics Programs (NISTIR 7010)
U.S. National Institute of Standards and Technology
- Retrieved
- 2026-08-14
- Response
- 200 application/pdf
- Size
- 17146 KB, 176 pages
- Characters
- 583,736 extracted, 580,852 indexed
sha256 bd3a2e47fb3f0d51462ede5650abba44c526efc2d92d0a5356341a880a639089
Processing: 176 pdf-parse page markers removed
In scope because: 16 distinct core terms at 1.71 per 1000 chars. Core: semiconductor x334, wafer x245, lithograph x115, thin film x87, photoresist x49, dopant x48. Supporting: metrology x256, silicon x146, plasma x78, deposition x77.
Licence: Work of the U.S. Government, not subject to copyright protection in the United States under 17 U.S.C. 105. Retrieved from nvlpubs.nist.gov. No third-party copyright notice found in the document text.
- https://nvlpubs.nist.gov/nistpubs/Legacy/IR/nistir7321.pdfPublic domain, U.S. Government
Semiconductor, Microelectronics and Nanoelectronics Programs (NISTIR 7321)
U.S. National Institute of Standards and Technology
- Retrieved
- 2026-08-14
- Response
- 200 application/pdf
- Size
- 17967 KB, 234 pages
- Characters
- 709,945 extracted, 706,075 indexed
sha256 afb8a4159c16689ebff31162971dc58ab2c5013b837cb7b6ed7f5ae778a6629c
Processing: 234 pdf-parse page markers removed
In scope because: 18 distinct core terms at 1.40 per 1000 chars. Core: semiconductor x360, wafer x249, lithograph x141, photoresist x62, thin film x49, integrated circuit x43. Supporting: metrology x385, silicon x163, plasma x81, deposition x63.
Licence: Work of the U.S. Government, not subject to copyright protection in the United States under 17 U.S.C. 105. Retrieved from nvlpubs.nist.gov. No third-party copyright notice found in the document text.
- https://nvlpubs.nist.gov/nistpubs/Legacy/IR/nistir7604.pdfPublic domain, U.S. Government
Semiconductor, Microelectronics and Nanoelectronics Programs (NISTIR 7604)
U.S. National Institute of Standards and Technology
- Retrieved
- 2026-08-14
- Response
- 200 application/pdf
- Size
- 13409 KB, 323 pages
- Characters
- 894,275 extracted, 888,892 indexed
sha256 66e63270c6277f40def5cddad155bc6e93b69c796ef9c9e5543d219538a29109
Processing: 323 pdf-parse page markers removed
In scope because: 18 distinct core terms at 1.32 per 1000 chars. Core: semiconductor x458, wafer x277, lithograph x165, thin film x63, photoresist x53, integrated circuit x44. Supporting: metrology x485, silicon x210, etch x77, plasma x73.
Licence: Work of the U.S. Government, not subject to copyright protection in the United States under 17 U.S.C. 105. Retrieved from nvlpubs.nist.gov. No third-party copyright notice found in the document text.
- https://www.osha.gov/semiconductors/definitionsPublic domain, U.S. Government
Semiconductors: Definitions
U.S. Occupational Safety and Health Administration
- Retrieved
- 2026-08-14
- Response
- 200 text/html
- Size
- 104 KB
- Characters
- 5,416 extracted, 5,416 indexed
sha256 ddaeee3708c8b3ca6e1d43d72d83b3b84a0a5499cc2eff31e653215f64f886b0
In scope because: 11 distinct core terms at 9.49 per 1000 chars. Core: wafer x20, semiconductor x8, photoresist x7, dopant x4, photolithograph x3, lithograph x3. Supporting: silicon x20, etch x8, deposition x8, anneal x3.
Licence: Work of the U.S. Government, not subject to copyright protection in the United States under 17 U.S.C. 105. Retrieved from www.osha.gov. No third-party copyright notice found in the document text.
- https://www.osha.gov/semiconductors/gallium-arsenide/device-fabricationPublic domain, U.S. Government
Semiconductors: Gallium Arsenide Device Fabrication
U.S. Occupational Safety and Health Administration
- Retrieved
- 2026-08-14
- Response
- 200 text/html
- Size
- 101 KB
- Characters
- 5,044 extracted, 5,044 indexed
sha256 2bf435dacb63e0b6fb9a4f4a20c13b5f079fc5959d1903bbdf54294dfec64ef0
In scope because: 6 distinct core terms at 1.90 per 1000 chars. Core: wafer x4, photoresist x2, photolithograph x1, lithograph x1, silane x1, chemical vapor x1. Supporting: silicon x14, etch x13, deposition x4, furnace x3.
Licence: Work of the U.S. Government, not subject to copyright protection in the United States under 17 U.S.C. 105. Retrieved from www.osha.gov. No third-party copyright notice found in the document text.
- https://www.osha.gov/semiconductors/gallium-arsenide/epitaxyPublic domain, U.S. Government
Semiconductors: Gallium Arsenide Epitaxy
U.S. Occupational Safety and Health Administration
- Retrieved
- 2026-08-14
- Response
- 200 text/html
- Size
- 100 KB
- Characters
- 7,168 extracted, 7,168 indexed
sha256 49e676f8abae23395fcc35e412dcd9d10e7b26f371b9d6befa68dd817e5ccac5
In scope because: 4 distinct core terms at 2.88 per 1000 chars. Core: epitax x12, wafer x7, dopant x1, thin film x1. Supporting: etch x4, vacuum x3.
Licence: Work of the U.S. Government, not subject to copyright protection in the United States under 17 U.S.C. 105. Retrieved from www.osha.gov. No third-party copyright notice found in the document text.
- https://www.osha.gov/semiconductors/gallium-arsenide/ingot-growingPublic domain, U.S. Government
Semiconductors: Gallium Arsenide Ingot Growing
U.S. Occupational Safety and Health Administration
- Retrieved
- 2026-08-14
- Response
- 200 text/html
- Size
- 103 KB
- Characters
- 8,815 extracted, 8,815 indexed
sha256 b0f2b1a67bb27fc72d34b7ec45f7a5e62fa4fc10457abb3bc9de1bb7979fd1b2
In scope because: 3 distinct core terms at 0.66 per 1000 chars. Core: dopant x3, gallium arsenide x2, wafer x1. Supporting: furnace x8, silicon x3, etch x2, vacuum x1.
Licence: Work of the U.S. Government, not subject to copyright protection in the United States under 17 U.S.C. 105. Retrieved from www.osha.gov. No third-party copyright notice found in the document text.
- https://www.osha.gov/semiconductors/gallium-arsenide/wafer-processingPublic domain, U.S. Government
Semiconductors: Gallium Arsenide Wafer Processing
U.S. Occupational Safety and Health Administration
- Retrieved
- 2026-08-14
- Response
- 200 text/html
- Size
- 95 KB
- Characters
- 2,934 extracted, 2,934 indexed
sha256 b26bd1070013bf9e4de28a227b5a99659d6308dd60fa2a229804af6aa9b150a0
In scope because: 2 distinct core terms at 4.30 per 1000 chars. Core: wafer x9, gallium arsenide x4. Supporting: silicon x1.
Licence: Work of the U.S. Government, not subject to copyright protection in the United States under 17 U.S.C. 105. Retrieved from www.osha.gov. No third-party copyright notice found in the document text.
- https://www.osha.gov/semiconductors/hazards-solutionsPublic domain, U.S. Government
Semiconductors: Hazards and Solutions
U.S. Occupational Safety and Health Administration
- Retrieved
- 2026-08-14
- Response
- 200 text/html
- Size
- 95 KB
- Characters
- 1,094 extracted, 1,094 indexed
sha256 455bc69beb18c72214a1c5eda9a97be9ee430d7cca21d8db0dd3f88ba6def09d
In scope because: 2 distinct core terms at 8.48 per 1000 chars. Core: semiconductor x7, gallium arsenide x3. Supporting: silicon x3.
Licence: Work of the U.S. Government, not subject to copyright protection in the United States under 17 U.S.C. 105. Retrieved from www.osha.gov. No third-party copyright notice found in the document text.
- https://www.osha.gov/semiconductors/silicon/metallizationPublic domain, U.S. Government
Semiconductors: Metallization
U.S. Occupational Safety and Health Administration
- Retrieved
- 2026-08-14
- Response
- 200 text/html
- Size
- 115 KB
- Characters
- 14,463 extracted, 14,463 indexed
sha256 5abee1d8a1a22361745245953d81c5d29b0d4500385bfdc3cbf2103932720efb
In scope because: 10 distinct core terms at 2.40 per 1000 chars. Core: wafer x10, sputter x7, photoresist x6, photolithograph x3, lithograph x3, phosphine x2. Supporting: etch x14, deposition x9, silicon x8, anneal x4.
Licence: Work of the U.S. Government, not subject to copyright protection in the United States under 17 U.S.C. 105. Retrieved from www.osha.gov. No third-party copyright notice found in the document text.
- https://www.osha.gov/semiconductors/silicon/non-fabrication-processingPublic domain, U.S. Government
Semiconductors: Non-Fabrication Processing
U.S. Occupational Safety and Health Administration
- Retrieved
- 2026-08-14
- Response
- 200 text/html
- Size
- 109 KB
- Characters
- 10,020 extracted, 10,020 indexed
sha256 0b2eee3af0997852537d708695194fc8047effefaf73a7d0698f7332d4e4f4d0
In scope because: 2 distinct core terms at 0.86 per 1000 chars. Core: wafer x7, integrated circuit x2. Supporting: (none).
Licence: Work of the U.S. Government, not subject to copyright protection in the United States under 17 U.S.C. 105. Retrieved from www.osha.gov. No third-party copyright notice found in the document text.
- https://www.osha.gov/semiconductors/silicon/device-fabricationPublic domain, U.S. Government
Semiconductors: Silicon Device Fabrication
U.S. Occupational Safety and Health Administration
- Retrieved
- 2026-08-14
- Response
- 200 text/html
- Size
- 131 KB
- Characters
- 25,699 extracted, 25,699 indexed
sha256 4d4c20e5451ff35ae3f8e8d9431ce6c44aac8a23043d6e8df42854e47491b197
In scope because: 12 distinct core terms at 3.86 per 1000 chars. Core: wafer x36, photoresist x20, dopant x17, ion implant x6, semiconductor x5, epitax x5. Supporting: etch x42, silicon x19, deposition x9, furnace x9.
Licence: Work of the U.S. Government, not subject to copyright protection in the United States under 17 U.S.C. 105. Retrieved from www.osha.gov. No third-party copyright notice found in the document text.
- https://www.osha.gov/semiconductors/silicon/substrate-manufacturePublic domain, U.S. Government
Semiconductors: Substrate Manufacture
U.S. Occupational Safety and Health Administration
- Retrieved
- 2026-08-14
- Response
- 200 text/html
- Size
- 111 KB
- Characters
- 12,052 extracted, 12,052 indexed
sha256 f9e75dd0712fb1f38c06f39022ad74560a452deeed49494a6501e2ff0739ae00
In scope because: 5 distinct core terms at 2.09 per 1000 chars. Core: wafer x20, silane x2, hydrofluoric x2, semiconductor x1, dopant x1. Supporting: silicon x16, etch x6, furnace x2, vacuum x2.
Licence: Work of the U.S. Government, not subject to copyright protection in the United States under 17 U.S.C. 105. Retrieved from www.osha.gov. No third-party copyright notice found in the document text.
- https://wiki.nanofab.ucsb.edu/wiki/Lab_RulesLinked only, text not reproduced
UCSB Nanofabrication Facility Lab Rules
University of California, Santa Barbara Nanofabrication Facility
- Retrieved
- 2026-08-14
- Response
- 200 text/html
- Size
- 151 KB
- Characters
- 78,541 extracted, none indexed
sha256 93ec2619a9901b0d46aefe125d161ead6928ada3dc2cfbfc0f3917503f3306a6
In scope because: 6 distinct core terms at 0.87 per 1000 chars. Core: photoresist x29, cleanroom x16, gowning x15, lithograph x5, wafer x4, thin film x1. Supporting: particle count x11, etch x10, vacuum x4, contamination x3.
Licence: No licence statement found in the document and wiki.nanofab.ucsb.edu is not a U.S. Government publisher, so the text is not reproduced. Linked only.
- https://wiki.nanofab.ucsb.edu/w/images/0/07/Nanofab_Policies_Chemical_Hygiene_Plan_9_13_18.pdfLinked only, text not reproduced
UCSB Nanofabrication Facility Policy, Guidelines and Chemical Hygiene Plan
University of California, Santa Barbara Nanofabrication Facility · 2018-09-13
- Retrieved
- 2026-08-14
- Response
- 200 application/pdf
- Size
- 1691 KB, 29 pages
- Characters
- 65,763 extracted, none indexed
sha256 f03765061d694950401c61a315d2cfebd4e730ec45d2a9628fc1bf73d023260b
Processing: 29 pdf-parse page markers removed
In scope because: 6 distinct core terms at 0.89 per 1000 chars. Core: photoresist x23, gowning x14, cleanroom x13, lithograph x5, wafer x2, thin film x1. Supporting: etch x7, particle count x7, vacuum x4, contamination x3.
Licence: No licence statement found in the document and wiki.nanofab.ucsb.edu is not a U.S. Government publisher, so the text is not reproduced. Linked only.